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TP0202K Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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TP0202K Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Vishay Siliconix TP0202K Document Number: 71609 S-83053-Rev. E, 29-Dec-08 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 1.2 Ω (typ.) • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 14 ns (typ.) • Low Input Capacitance: 31 pF (typ.) • 2000 V ESD Protection APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid-State Relays BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Easily Driven without Buffer Notes: a. Surface Mounted on FR4 board. b. Pulse width limited by maximum junction temperature. PRODUCT SUMMARY VDS (V) RDS(on) (Ω)VGS(th) (V) ID (mA) Qg (Typ.) - 30 1.4 at VGS = - 10 V - 1.3 to - 3.0 - 385 1000 3.5 at VGS = - 4.5 V - 1.3 to - 3.0 - 240 Marking Code: 2Kwll 2K = Part Number Code for TP0202K w = Week Code ll = Lot Traceability TO-236 (SOT-23) Top View 2 1 S D G 3 Ordering Information: TP0202K-T1-E3 (Lead (Pb)-free) TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID - 385 mA TA = 85 °C - 280 Pulsed Drain Currentb IDM - 750 Power Dissipationa TA = 25 °C PD 350 mW TA = 85 °C 185 Maximum Junction-to-Ambienta RthJA 350 °C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C |
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