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HUFA75639S3S Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

Il numero della parte HUFA75639S3S
Spiegazioni elettronici  56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

HUFA75639S3S Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor

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©2001 Fairchild Semiconductor Corporation
HUFA75639G3, HUFA75639P3, HUFA75639S3S Rev. B
CAPACITANCE SPECIFICATIONS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)
-
2000
-
pF
Output Capacitance
COSS
-
500
-
pF
Reverse Transfer Capacitance
CRSS
-65
-
pF
Electrical Specifications
TC = 25
oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
VSD
ISD = 56A
-
-
1.25
V
Reverse Recovery Time
trr
ISD = 56A, dISD/dt = 100A/µs
-
-
110
ns
Reverse Recovered Charge
QRR
ISD = 56A, dISD/dt = 100A/µs
-
-
320
nC
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC, CASE TEMPERATURE (
oC)
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
175
TC, CASE TEMPERATURE (
oC)
0
10
20
30
40
50
60
25
50
75
100
125
150
175
0.01
0.1
1
10-5
10-4
10-3
10-2
10-1
100
101
SINGLE PULSE
t, RECTANGULAR PULSE DURATION (s)
2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
PDM
t1
t2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
HUFA75639G3, HUFA75639P3, HUFA75639S3S


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