©2001 Fairchild Semiconductor Corporation

HUFA75309P3, HUFA75309D3, HUFA75309D3S Rev. B

HUFA75309P3, HUFA75309D3, HUFA75309D3S

19A, 55V, 0.070 Ohm, N-Channel UltraFET

Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET® process. This

advanced process technology

achieves the lowest possible on-resistance per silicon area,

resulting in outstanding performance. This device is capable

of withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Formerly developmental type TA75309.

Features

• 19A, 55V

• Simulation Models

Models

- SPICE and SABER Thermal Impedance Models

Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Ordering Information

PART NUMBER

PACKAGE

BRAND

HUFA75309P3

TO-220AB

75309P

HUFA75309D3

TO-251AA

75309D

HUFA75309D3S

TO-252AA

75309D

NOTE: When ordering, use the entire part number. Add the suffix T to

obtain the TO-252AA variant in tape and reel, e.g., HUFA75309D3ST.

D

G

S

JEDEC STYLE TO-220AB

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

GATE

SOURCE

Data Sheet

December 2001