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TDA1517ATW Scheda tecnica(PDF) 6 Page - NXP Semiconductors

Il numero della parte TDA1517ATW
Spiegazioni elettronici  8 W BTL or 2 횞 4 W SE power amplifier
Download  19 Pages
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

TDA1517ATW Scheda tecnica(HTML) 6 Page - NXP Semiconductors

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2001 Apr 17
6
NXP Semiconductors
Product specification
8 W BTL or 2
× 4 W SE power amplifier
TDA1517ATW
AC CHARACTERISTICS
VP =12V; f=1kHz; Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
SE application; note 1
Po
output power
note 2
THD = 1%
2.5
3.3
W
THD = 10%
3
4
W
THD
total harmonic distortion
Po =1W
0.1
%
fro(L)
low frequency roll-off
−1dB; note 3
25
Hz
fro(H)
high frequency roll off
−1dB
20
−−
kHz
GV
voltage gain
19
20
21
dB
⎪ΔG
V
channel balance
−−
1dB
SVRR
supply voltage ripple rejection
note 4
on
46
−−
dB
mute
46
−−
dB
standby
80
−−
dB
⎪Z
i
input impedance
50
60
75
k
Ω
Vn(o)(rms)
noise output voltage (RMS value)
note 5
on; RS =0 Ω−
50
−μV
on; RS =10kΩ−
70
100
μV
mute; note 6
50
−μV
α
cs
channel separation
RS =10kΩ
40
55
dB
Vo(mote)
output voltage in mute
note 7
−−
2mV
BTL application; note 8
PO
output power
note 2
THD = 1%
5
6.6
W
THD = 10%
6.5
8.0
W
THD
total harmonic distortion
Po =1W
0.03
%
fro(L)
low frequency roll-off
−1dB; note 3
25
Hz
fro(H)
high frequency roll off
−1dB
20
−−
kHz
GV
voltage gain
25
26
27
dB
SVRR
supply voltage ripple rejection
note 4
on
50
−−
dB
mute
50
−−
dB
standby
80
−−
dB
⎪Z
i
input impedance
25
30
38
k
Ω
Vn(o)(rms)
noise output voltage (RMS value)
note 5
on; RS =0 Ω−
70
−μV
on; RS =10kΩ−
100
200
μV
mute; note 6
60
−μV
Vo(mute)
output voltage in mute
note 7
−−
2mV


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