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BTA312-800C Scheda tecnica(PDF) 6 Page - NXP Semiconductors |
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BTA312-800C Scheda tecnica(HTML) 6 Page - NXP Semiconductors |
6 / 11 page NXP Semiconductors BTA312-800C 3Q Hi-Com Triac BTA312-800C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 4 October 2012 6 / 11 Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 20 - - A/ms Tj (°C) -50 150 100 0 50 003aag894 1 2 3 0 (1) (2) (3) IGT IGT(25°C) (1) T2- G- (2) T2+ G- (3) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature Tj (°C) -50 150 100 0 50 003aag895 1 2 3 0 IL IL(25°C) Fig. 8. Normalized latching current as a function of junction temperature |
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