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TS3310ITD1022T Scheda tecnica(PDF) 5 Page - Touchstone Semiconductor Inc |
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TS3310ITD1022T Scheda tecnica(HTML) 5 Page - Touchstone Semiconductor Inc |
5 / 18 page TS3310 TS3310DS r1p1 Page 5 RTFDS Active-Mode IQ vs Input Voltage with No Load : Circuit A (STORE=1.8V) Input Voltage - V 0.900 1.125 1.350 1.575 1.800 800 640 480 160 0 320 Active-Mode IQ vs Input Voltage with No Load : Circuit B (STORE=1.8V) Input Voltage - V 0.900 1.125 1.350 1.575 1.800 800 640 480 160 0 320 Circuit A Circuit B L 10µH PN: CBC3225T100KR 100µH PN: CBC3225T101KR CIN=CSTORE 10µF 1µF Efficiency vs STORE Output Current IN=3V, STORE=5V 0.0001 0.001 0.01 0.1 1 10 100 ISTORE - mA 100 90 80 70 60 50 40 30 20 10 0 TYPICAL PERFORMANCE CHARACTERISTICS +25°C -40°C +85°C +25°C -40°C +85°C VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise specified. Circuit B Circuit A |
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