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STP18NM60N Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STP18NM60N Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 21 page STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N Electrical characteristics Doc ID 15868 Rev 4 5/21 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 13 52 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 13 A, VGS=0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =13 A, di/dt =100 A/µs, VDD = 60 V (see Figure 20) - 300 4.0 25 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 60 V di/dt =100 A/µs, ISD = 13 A Tj = 150°C (see Figure 20) - 360 4.5 25 ns µC A |
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