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FQPF3N80 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FQPF3N80 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page Rev. A, September 2000 (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) ©2000 Fairchild Semiconductor International Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 185mH, IAS = 1.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.9 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.9 A -- 3.8 5.0 Ω gFS Forward Transconductance VDS = 50 V, ID = 0.9 A -- 2.3 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 530 690 pF Coss Output Capacitance -- 57 75 pF Crss Reverse Transfer Capacitance -- 7.0 9.0 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 3.0 A, RG = 25 Ω -- 15 40 ns tr Turn-On Rise Time -- 40 90 ns td(off) Turn-Off Delay Time -- 30 70 ns tf Turn-Off Fall Time -- 30 70 ns Qg Total Gate Charge VDS = 640 V, ID = 3.0 A, VGS = 10 V -- 15 19 nC Qgs Gate-Source Charge -- 3.5 -- nC Qgd Gate-Drain Charge -- 7.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.8 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.2 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.8 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 3.0 A, dIF / dt = 100 A/µs -- 530 -- ns Qrr Reverse Recovery Charge -- 2.8 -- µC |
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