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FZT855TA Scheda tecnica(PDF) 2 Page - Diodes Incorporated

Il numero della parte FZT855TA
Spiegazioni elettronici  150V NPN MEDIUM POWER TRANSISTOR IN SOT223
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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FZT855TA Scheda tecnica(HTML) 2 Page - Diodes Incorporated

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FZT855
Document Number DS33176 Rev. 5 - 2
2 of 7
www.diodes.com
March 2013
© Diodes Incorporated
FZT855
A Product Line of
Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
250
V
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
5
A
Peak Pulse Current
ICM
10
A
Base Current
IB
1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear derating factor
(Note 5)
PD
3.0
24
W
mW/°C
(Note 6)
1.6
12.8
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
42
°C/W
(Note 6)
RJA
78
Thermal Resistance Junction to Lead
(Note 7)
RJL
8.84
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
≥ 8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
≥ 400
V
C
Notes:
5. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 25mm X 25mm single sided 1oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.


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