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FZT857QTA Scheda tecnica(PDF) 4 Page - Diodes Incorporated |
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FZT857QTA Scheda tecnica(HTML) 4 Page - Diodes Incorporated |
4 / 7 page FZT857 Document Number DS33177 Rev. 6 - 2 4 of 7 www.diodes.com February 2013 © Diodes Incorporated FZT857 A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 350 475 V IC = 100µA Collector-Emitter Breakdown Voltage BVCER 350 475 V IC = 1µA, RB ≤ 1kΩ Collector-Emitter Breakdown Voltage (Note 10) BVCEO 300 350 V IC = 1mA Emitter-Base Breakdown Voltage BVEBO 7 8 V IE = 100µA Collector Cut-off Current ICBO <1 50 1 nA µA VCB = 300V VCB = 300V, TA = +100°C Collector Cut-off Current ICER <1 50 1 nA µA VCB = 300V, RB ≤ 1kΩ VCB = 300V, TA = +100°C Emitter Cut-off Current IEBO <1 10 nA VEB = 6V DC Current Gain (Note 10) hFE 100 200 IC = 10mA, VCE = 5V 100 200 300 IC = 500mA, VCE = 10V 15 25 IC = 2A, VCE = 10V 15 IC = 3A, VCE = 10V Collector-Emitter Saturation Voltage (Note 10) VCE(sat) 59 100 mV IC = 500mA, IB = 50mA 95 155 IC = 1A, IB = 100mA 180 230 IC = 2A, IB = 200mA 300 345 IC = 3.5A, IB = 600mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) 1020 1250 mV IC = 3.5A, IB = 600mA Base-Emitter Turn-On Voltage (Note 10) VBE(on) 940 1120 mV IC = 3.5A, VCE = 10V Current Gain-Bandwidth Product (Note 10) fT 80 MHz IC = 100mA, VCE = 10V, f = 50MHz Output Capacitance (Note 10) Cobo 21 pF VCB = 20V, f = 1MHz Switching Times ton 100 ns IC = 250mA, VCC = 50V, IB1 = -IB2 = 25mA toff 5300 Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% |
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