FQP55N10 datasheet(3/8 Pages) FAIRCHILD

Il numero della parte	FQP55N10

Spiegazioni elettronici	100V N-Channel MOSFET

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Produttore elettronici	FAIRCHILD [Fairchild Semiconductor]

Homepage	http://www.fairchildsemi.com

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Rev. A, August 2000

0

10203040

50607080

0

2

4

6

8

10

12

V

DS = 50V

V

DS = 80V

※ Note : I

D = 55A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

10

-1

10

0

10

1

10

2

175℃

※ Notes :

1. V

GS = 0V

2. 250μs Pulse Test

25℃

V

SD, Source-Drain voltage [V]

0

60

120

180

240

300

0.00

0.03

0.06

0.09

0.12

※ Note : T

J = 25

℃

V

GS = 20V

V

GS = 10V

I

D , Drain Current [A]

2

468

10

-1

10

0

10

1

10

2

175℃

25℃

-55℃

※ Notes :

1. V

DS = 40V

2. 250μs Pulse Test

V

GS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

※ Notes :

1. 250μs Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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