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FQP2P40 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FQP2P40 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2000 Fairchild Semiconductor International (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) Rev. A2, December 2000 Elerical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 52.5mH, IAS = -2.0A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -2.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -400 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -- - -- V/°C IDSS Zero Gate Voltage Drain Current VDS = -400 V, VGS = 0 V -- -- -1 µA VDS = -320 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.0 A -- 5.0 6.5 Ω gFS Forward Transconductance VDS = -50 V, ID = -1.0 A -- 1.42 -- S Dynamic Characteristics Ciss Input Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 270 350 pF Coss Output Capacitance -- 45 60 pF Crss Reverse Transfer Capacitance -- 6.5 8.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -200 V, ID = -2.0 A, RG = 25 Ω -- 9 30 ns tr Turn-On Rise Time -- 33 75 ns td(off) Turn-Off Delay Time -- 22 55 ns tf Turn-Off Fall Time -- 25 60 ns Qg Total Gate Charge VDS = -320 V, ID = -2.0 A, VGS = -10 V -- 10 13 nC Qgs Gate-Source Charge -- 2.1 -- nC Qgd Gate-Drain Charge -- 5.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -2.0 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -8.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.0 A -- -- -5.0 V trr Reverse Recovery Time VGS = 0 V, IS = -2.0 A, dIF / dt = 100 A/µs -- 250 -- ns Qrr Reverse Recovery Charge -- 0.85 -- µC |
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