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IRLR3110ZPBF Scheda tecnica(PDF) 1 Page - International Rectifier

Il numero della parte IRLR3110ZPBF
Spiegazioni elettronici  Advanced Process Technology, Ultra Low On-Resistance, 175C Operating Temperature
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRLR3110ZPBF Scheda tecnica(HTML) 1 Page - International Rectifier

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11/30/09
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1
HEXFET® is a registered trademark of International Rectifier.
Description
Specifically designed for Industrial applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Industrial applications
and a wide variety of other applications.
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
PD - 97175B
IRLR3110ZPbF
IRLU3110ZPbF
HEXFET® Power MOSFET
VDSS = 100V
RDS(on) = 14mΩ
S
D
G
D-Pak
IRLR3110ZPbF
I-Pak
IRLU3110ZPbF
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.05
RθJA
Junction-to-Ambient (PCB mount)
ij
–––
40
°C/W
RθJA
Junction-to-Ambient
j
–––
110
140
110
See Fig.12a, 12b, 15, 16
140
0.95
±16
Max.
63
45
250
42
-55 to + 175
300
10 lbf
yin (1.1Nym)


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