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FQA44N08 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FQA44N08
Spiegazioni elettronici  80V N-Channel MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQA44N08 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
QFET
QFET
QFET
QFETTM
FQA44N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Features
• 49.8A, 80V, RDS(on) = 0.034Ω @VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175
°C maximum junction temperature rating
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
FQA44N08
Units
VDSS
Drain-Source Voltage
80
V
ID
Drain Current
- Continuous (TC = 25°C)
49.8
A
- Continuous (TC = 100°C)
35.2
A
IDM
Drain Current
- Pulsed
(Note 1)
199.2
A
VGSS
Gate-Source Voltage
± 25
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
450
mJ
IAR
Avalanche Current
(Note 1)
49.8
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.3
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
6.5
V/ns
PD
Power Dissipation (TC = 25°C)
163
W
- Derate above 25°C
1.09
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
0.92
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.24
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
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S
D
G
TO-3P
FQA Series
G
S
D


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