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STD8NM50N Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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STD8NM50N Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 19 page STD8NM50N, STP8NM50N, STU8NM50N Electrical ratings Doc ID 17413 Rev 6 3/19 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 500 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 5 A ID Drain current (continuous) at TC = 100 °C 3 A PTOT Total dissipation at TC = 25 °C 45 W dv/dt (1) 1. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS Peak diode recovery voltage slope 15 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit DPAK IPAK TO-220 Rthj-case Thermal resistance junction-case max 2.78 °C/W Rthj-amb Thermal resistance junction-ambient max 100 62.5 °C/W Rthj-pcb Thermal resistance junction-pcb max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 140 mJ |
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