Motore di ricerca datesheet componenti elettronici |
|
FDN5618 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
|
FDN5618 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDN5618P Rev B(W) Typical Characteristics 0 1 2 3 4 5 012 34 -VDS, DRAIN-SOURCE VOLTAGE (V) -4.5V -6.0V -2.5V -4.0V -3.5V VGS = -10V -3.0V 0.8 1 1.2 1.4 1.6 1.8 2 2.2 01 234 5 -ID, DRAIN CURRENT (A) VGS = -3.0V -4.0V -10V -4.5V -6.0V -3.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.8 0.9 1 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -1.25A VGS = -10V 0.1 0.2 0.3 0.4 0.5 0.6 24 68 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.65 A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 1 2 3 4 5 6 11.522.533.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) TA = 125 oC 25 oC VDS = - 5V -55 oC 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Codice articolo simile - FDN5618 |
|
Descrizione simile - FDN5618 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |