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FDG6335N Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDG6335N
Spiegazioni elettronici  20V N & P-Channel PowerTrench MOSFETs
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6335N Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FDG6335N Rev C (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
VGS = 0 V,
ID = 250
µA
20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
0.6
1.1
1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA, Referenced to 25°C
–2.8
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 4.5 V,
ID = 0.7 A
VGS = 2.5 V,
ID = 0.6 A
VGS = 4.5 V,
ID = 0.7 A, TJ=125°C
180
293
247
300
400
442
m
ID(on)
On–State Drain Current
VGS = 4.5 V,
VDS = 5 V
1
A
gFS
Forward Transconductance
VDS = 5 V,
ID = 0.7 A
2.8
S
Dynamic Characteristics
Ciss
Input Capacitance
113
pF
Coss
Output Capacitance
34
pF
Crss
Reverse Transfer Capacitance
VDS = 10 V,
V GS = 0 V,
f = 1.0 MHz
16
pF
Switching Characteristics
(Note 2)
td(on)
Turn–On Delay Time
5
10
ns
tr
Turn–On Rise Time
7
15
ns
td(off)
Turn–Off Delay Time
9
18
ns
tf
Turn–Off Fall Time
VDD = 10 V,
ID = 1 A,
VGS = 4.5 V, RGEN = 6
1.5
3
ns
Qg
Total Gate Charge
1.1
1.4
nC
Qgs
Gate–Source Charge
0.24
nC
Qgd
Gate–Drain Charge
VDS = 10 V,
ID = 0.7 A,
VGS = 4.5 V
0.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
0.25
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.25 A (Note 2)
0.74
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad .
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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