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FDG6335N Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDG6335N
Spiegazioni elettronici  20V N & P-Channel PowerTrench MOSFETs
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6335N Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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October 2001
©2001 Fairchild Semiconductor Corporation
FDG6335N Rev C (W)
FDG6335N
20V N-Channel PowerTrench
®
® MOSFET
General Description
This
N-Channel
MOSFET
has
been
designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
• DC/DC converter
• Power management
• Loadswitch
Features
• 0.7 A, 20 V.
RDS(ON) = 300 m
Ω @ V
GS = 4.5 V
RDS(ON) = 400 m
Ω @ V
GS = 2.5 V
• Low gate charge (1.1 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
G
D
D
G
S
Pin 1
SC70-6
G
D
S
Dual N-Channel
1 or 4
2 or 5
3 or 6
6 or 3
5 or 2
4 or 1
S
D
G
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
– Continuous
(Note 1)
0.7
A
– Pulsed
2.1
PD
Power Dissipation for Single Operation
(Note 1)
0.3
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.35
FDG6335N
7’’
8mm
3000 units


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