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FDG6335N Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

Il numero della parte FDG6335N
Spiegazioni elettronici  20V N & P-Channel PowerTrench MOSFETs
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6335N Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor

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FDG6335N Rev C (W)
Typical Characteristics
0
1
2
3
4
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
2.0V
3.0V
VGS=4.5V
2.5V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0
1
2
3
4
ID, DRAIN CURRENT (A)
VGS = 2.5V
3.0V
4.0V
3.5V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
ID =0.7A
VGS = 4.5V
0
0.2
0.4
0.6
0.8
1
2
3
4
5
V
GS, GATE TO SOURCE VOLTAGE (V)
ID =0.4A
TA = 125
oC
TA = 25
oC
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
0.5
1
1.5
2
2.5
0.5
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
oC
25
oC
125
oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature.


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