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FDG6332C Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDG6332C Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDG6332C Rev C2 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA Q1 Q2 20 –20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Ref. to 25°C ID = –250 µA,Ref. to 25°C Q1 Q2 14 –14 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V VDS = –16 V, VGS = 0 V Q1 Q2 1 –1 µA IGSSF /IGSSR Gate–Body Leakage, Forward VGS = ± 12 V, V DS = 0 V ±100 nA IGSSF /IGSSR Gate–Body Leakage, Reverse VGS = ± 12V , V DS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Q1 VDS = VGS, ID = 250 µA 0.6 1.1 1.5 Gate Threshold Voltage Q2 VDS = VGS, ID = –250 µA -0.6 –1.2 –1.5 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient Q1 Q2 ID = 250 µA,Ref. To 25°C ID = –250 µA,Ref. to 25°C –2.8 3 mV/ °C RDS(on) Q1 VGS = 4.5 V, ID =0.7 A VGS = 2.5 V, ID =0.6 A VGS = 4.5 V, ID =0.7A,TJ=125 °C 180 293 247 300 400 442 Static Drain–Source On–Resistance Q2 VGS = –4.5 V, ID = –0.6 A VGS = –2.5 V, ID = –0.5 A VGS=–4.5 V, ID =–0.6 A,TJ=125 °C 300 470 400 420 630 700 m Ω gFS Q1 VDS = 5 V ID = 0.7 A 2.8 Forward Transconductance Q2 VDS = –5 V ID = –0.6A 1.8 S ID(on) Q1 VGS = 4.5 V, VDS = 5 V 1 On–State Drain Current Q2 VGS = –4.5 V, VDS = –5 V –2 A Dynamic Characteristics Ciss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 113 Input Capacitance Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 114 pF Coss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 34 Output Capacitance Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 24 pF Crss Q1 VDS=10 V, V GS= 0 V, f=1.0MHz 16 Reverse Transfer Capacitance Q2 VDS=–10 V, V GS= 0 V, f=1.0MHz 9 pF Switching Characteristics (Note 2) td(on) Q1 5 10 Turn–On Delay Time Q2 5.5 11 ns tr Q1 7 15 Turn–On Rise Time Q2 14 25 ns td(off) Q1 9 18 Turn–Off Delay Time Q2 6 12 ns tf Q1 1.5 3 Turn–Off Fall Time Q2 For Q1: VDS =10 V, I D= 1 A VGS= 4.5 V, RGEN = 6 Ω For Q2: VDS =–10 V, I D= –1 A VGS= –4.5 V, RGEN = 6 Ω 1.7 3.4 ns Qg Q1 1.1 1.5 Total Gate Charge Q2 1.4 2 nC Qgs Q1 0.24 Gate–Source Charge Q2 0.3 nC Qgd Q1 0.3 Gate–Drain Charge Q2 For Q1: VDS =10 V, I D= 0.7 A VGS= 4.5 V, RGEN = 6 Ω For Q2: VDS =–10 V, I D= –0.6 A VGS= –4.5 V, RGEN = 6 Ω 0.4 nC |
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