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FDG6332C Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDG6332C Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page September 2003 ©2003 Fairchild Semiconductor Corporation FDG6332C Rev C2 (W) FDG6332C 20V N & P-Channel PowerTrench ® ® MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. Applications • DC/DC converter • Load switch • LCD display inverter Features • Q1 0.7 A, 20V. RDS(ON) = 300 m Ω @ V GS = 4.5 V RDS(ON) = 400 m Ω @ V GS = 2.5 V • Q2 –0.6 A, –20V. RDS(ON) = 420 m Ω @ V GS = –4.5 V RDS(ON) = 630 m Ω @ V GS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick) S G D D G S Pin 1 SC70-6 Complementary 6 5 4 3 2 1 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 20 –20 V VGSS Gate-Source Voltage ±12 ±12 V ID Drain Current – Continuous (Note 1) 0.7 –0.6 A – Pulsed 2.1 –2 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .32 FDG6332C 7’’ 8mm 3000 units |
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