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FDG6332C Scheda tecnica(PDF) 6 Page - Fairchild Semiconductor |
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FDG6332C Scheda tecnica(HTML) 6 Page - Fairchild Semiconductor |
6 / 8 page FDG6332C Rev C2 (W) Typical Characteristics: P-Channel 0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) -3.5V -2.5V -2.0V VGS = -4.5V -3.0V 0.8 1 1.2 1.4 1.6 1.8 0 0.5 1 1.5 2 -ID, DRAIN CURRENT (A) VGS = -2.5V -3.0V -3.5V -4.5V -4.0V Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -0.6A VGS = -4.5V 0.2 0.4 0.6 0.8 1 1.2 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.3 A TA = 125 oC TA = 25 oC Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 0 0.5 1 1.5 2 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = -5V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Codice articolo simile - FDG6332C |
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