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FDG6331L Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDG6331L
Spiegazioni elettronici  Integrated Load Switch
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6331L Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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April 2001
2001 Fairchild Semiconductor Corporation
FDG6331L Rev B(W)
FDG6331L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 0.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6 package.
Applications
• Power management
• Load switch
Features
• –0.8 A, –8 V.
RDS(ON) = 260 m
Ω @ V
GS = –4.5 V
RDS(ON) = 330 m
Ω @ V
GS = –2.5 V
RDS(ON) = 450 m
Ω @ V
GS = –1.8 V
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
Pin 1
SC70-6
3
2
1
4
5
6
Q1
Q2
Vout,C1
Vout,C1
R2
Vin,R1
ON/OFF
R1,C1
See Application Circuit
Equivalent Circuit
V DROP
+–
IN
OUT
ON/OFF
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VIN
Gate-Source Voltage (Q2)
± 8
V
VON/OFF
Gate-Source Voltage (Q1)
–0.5 to 8
V
ILoad
Load Current
– Continuous
(Note 2)
–0.8
A
– Pulsed
(Note 2)
–2.4
PD
Maximum Power Dissipation
(Note 1)
0.3
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
415
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.31
FDG6331L
7’’
8mm
3000 units


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