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FDG6320C Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDG6320C
Spiegazioni elettronici  Dual N & P Channel Digital FET
Download  12 Pages
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6320C Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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Electrical Characteristics (T
A = 25
OC unless otherwise noted )
Symbol
Parameter
Conditions
Type Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 µA
N-Ch
25
V
V
GS = 0 V, ID = -250 µA
P-Ch
-25
BV
DSS/TJ
Breakdown Voltage Temp. Coefficient
I
D = 250 µA, Referenced to 25
oC
N-Ch
25
mV/
oC
I
D = -250 µA, Referenced to 25
oC
P-Ch
-19
I
DSS
Zero Gate Voltage Drain Current
V
DS = 20 V, VGS = 0 V,
N-Ch
1
µA
T
J = 55°C
10
I
DSS
Zero Gate Voltage Drain Current
V
DS =-20 V, VGS = 0 V,
P-Ch
-1
µA
T
J = 55°C
-10
I
GSS
Gate - Body Leakage Current
V
GS = 8 V, VDS = 0 V
N-Ch
100
nA
V
GS = -8 V, VDS = 0 V
P-Ch
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = 250 µA
N-Ch
0.65
0.85
1.5
V
V
DS = VGS, ID = -250 µA
P-Ch
-0.65
-0.82
-1.5
V
GS(th)/TJ
Gate Threshold Voltage Temp. Coefficient
I
D = 250 µA, Referenced to 25
oC
N-Ch
-2.1
mV/
oC
I
D = -250 µA, Referenced to 25
oC
P-Ch
2.1
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = 4.5 V, ID = 0.22 A
N-Ch
2.6
4
T
J =125°C
5.3
7
V
GS = 2.7 V, ID = 0.19 A
3.7
5
V
GS = -4.5 V, ID = -0.14 A
P-Ch
7.3
10
T
J =125°C
11
17
V
GS = -2.7 V, ID = -0.05 A
10.4
13
I
D(ON)
On-State Drain Current
V
GS = 4.5 V, VDS = 5 V
N-Ch
0.22
A
V
GS = -4.5 V, VDS = -5 V
P-Ch
-0.14
g
FS
Forward Transconductance
V
DS = 5 V, ID = 0.22 A
N-Ch
0.2
S
V
DS = -5 V, ID = -0.14 A
P-Ch
0.12
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
N-Ch
9.5
pF
V
DS = 10 V, VGS = 0 V,
P-Ch
12
C
oss
Output Capacitance
f = 1.0 MHz
N-Ch
6
P-Channel
P-Ch
7
C
rss
Reverse Transfer Capacitance
V
DS = -10 V, VGS = 0 V,
N-Ch
1.3
f = 1.0 MHz
P-Ch
1.5
FDG6320C Rev. D


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