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FDG6320C Scheda tecnica(PDF) 7 Page - Fairchild Semiconductor |
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FDG6320C Scheda tecnica(HTML) 7 Page - Fairchild Semiconductor |
7 / 12 page FDG6320C.Rev D Typical Electrical Characteristics: P-Channel (continued) Figure 20. Single Pulse Maximum Power Dissipation. Figure 18. Capacitance Characteristics. Figure 17. Gate Charge Characteristics. Figure 19. Maximum Safe Operating Area. 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 Q , GATE CHARGE (nC) g V = -5V DS -10V -15V I = -0.14A D 1 2 3 5 10 20 40 0.005 0.03 0.1 0.3 1 - V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT DC DS 1s 100ms 10ms V = -4.5V SINGLE PULSE R = See Note 1b T = 25°C θJA GS A 10s 0.1 0.2 0.5 1 2 5 10 20 0.5 1 3 5 10 20 40 -V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss 0.0001 0.001 0.01 0.1 1 10 200 0 10 20 30 40 50 SINGLE PULSE TIME (SEC) SINGLE PULSE R =415°C/W T = 25°C θJA A |
Codice articolo simile - FDG6320C |
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