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FDG6316 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDG6316
Spiegazioni elettronici  P-Channel 1.8V Specified PowerTrench MOSFET
Download  5 Pages
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6316 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FDG6316P Rev D (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown
Voltage
VGS = 0 V,
ID = –250
µA
–12
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA, Referenced to 25°C
–3.7
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –10 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = –8 V,
VDS = 0 V
–100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = 8 V,
VDS = 0 V
100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = –250
µA
–0.4
–0.6
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA, Referenced to 25°C
2
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –0.7 A
VGS = –2.5 V, ID = –0.5 A
VGS = –1.8 V, ID = –0.4 A
VGS = –4.5 V, ID = –0.7 A, TJ=125°C
221
297
427
250
270
360
650
348
m
ID(on)
On–State Drain Current
VGS = –4.5 V, VDS = –5 V
–1.8
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –0.7 A
2.5
S
Dynamic Characteristics
Ciss
Input Capacitance
146
pF
Coss
Output Capacitance
60
pF
Crss
Reverse Transfer Capacitance
VDS = –6 V,
V GS = 0 V,
f = 1.0 MHz
48
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
5
10
ns
tr
Turn–On Rise Time
13
23
ns
td(off)
Turn–Off Delay Time
8
16
ns
tf
Turn–Off Fall Time
VDD = –6 V,
ID = 1 A,
VGS = –4.5 V, RGEN = 6
2
4
ns
Qg
Total Gate Charge
1.7
2.4
nC
Qgs
Gate–Source Charge
0.3
nC
Qgd
Gate–Drain Charge
VDS = –6 V,
ID = –0.7 A,
VGS = –4.5 V
0.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.25
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.25 A(Note 2)
–0.7
–1.2
V
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad of FR-4
PCB on still air environment
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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