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FDG6316P Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDG6316P Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDG6316P Rev D (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –12 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C –3.7 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = –10 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –8 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 8 V, VDS = 0 V 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.6 –1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C 2 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = –4.5 V, ID = –0.7 A VGS = –2.5 V, ID = –0.5 A VGS = –1.8 V, ID = –0.4 A VGS = –4.5 V, ID = –0.7 A, TJ=125°C 221 297 427 250 270 360 650 348 m Ω ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –1.8 A gFS Forward Transconductance VDS = –5 V, ID = –0.7 A 2.5 S Dynamic Characteristics Ciss Input Capacitance 146 pF Coss Output Capacitance 60 pF Crss Reverse Transfer Capacitance VDS = –6 V, V GS = 0 V, f = 1.0 MHz 48 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 5 10 ns tr Turn–On Rise Time 13 23 ns td(off) Turn–Off Delay Time 8 16 ns tf Turn–Off Fall Time VDD = –6 V, ID = 1 A, VGS = –4.5 V, RGEN = 6 Ω 2 4 ns Qg Total Gate Charge 1.7 2.4 nC Qgs Gate–Source Charge 0.3 nC Qgd Gate–Drain Charge VDS = –6 V, ID = –0.7 A, VGS = –4.5 V 0.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –0.25 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –0.25 A(Note 2) –0.7 –1.2 V Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad of FR-4 PCB on still air environment 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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