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FDG6316P Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDG6316P Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page December 2001 2001 Fairchild Semiconductor Corporation FDG6316P Rev D W) FDG6316P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Applications • Battery management • Load switch Features • –0.7 A, –12 V. RDS(ON) = 270 m Ω @ VGS = –4.5 V RDS(ON) = 360 m Ω @ VGS = –2.5 V RDS(ON) = 650 m Ω @ VGS = –1.8 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package S G D D G S Pin 1 SC70-6 S G D D G S 6 or 3 5 or 2 4 or 1 1 or 4 2 or 5 3 or 6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ± 8 V ID Drain Current – Continuous (Note 1) –0.7 A – Pulsed –1.8 PD Power Dissipation for Single Operation (Note 1) 0.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 415 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .16 FDG6316P 7’’ 8mm 3000 units |
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