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FDG6316P Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDG6316P Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDG6316P Rev D (W) Typical Characteristics 0 0.5 1 1.5 2 00.511.5 22.533.5 -VDS, DRAIN TO SOURCE VOLTAGE (V) VGS=-4.5V -1.8V -2.0V -2.5V -1.5V 0.6 1 1.4 1.8 2.2 2.6 3 0 0.5 1 1.5 2 -ID, DRAIN CURRENT (A) VGS=-1.5V -3.0V -4.5V -2.0V -2.5V -1.8V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -0.7A VGS = -4.5V 0.15 0.25 0.35 0.45 0.55 0.65 0.75 12 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.4A TA = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 0.5 1 1.5 2 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25oC -125oC VDS = -5V 0.0001 0.001 0.01 0.1 1 10 00.2 0.4 0.6 0.811.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) VGS = 0V TA = 125 oC 25oC -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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