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FDG6306P Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDG6306P Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDG6306P Rev C (W) Typical Characteristics 0 0.4 0.8 1.2 1.6 2 0 0.5 1 1.5 2 2.5 3 -VDS, DRAIN-SOURCE VOLTAGE (V) -3.5V -2.5V -2.0V VGS = -4.5V -3.0V 0.75 1 1.25 1.5 1.75 2 2.25 2.5 0 0.5 1 1.5 2 -ID, DRAIN CURRENT (A) VGS = -2.5V -3.0V -3.5V -4.5V -4.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( o C) ID = -0.6A VGS = -4.5V 0.2 0.4 0.6 0.8 1 1.2 1.5 2 2.5 3 3.5 4 4.5 5 -VGS , GATE TO SOURCE VOLTAGE (V) ID = -0.3 A TA = 125 o C TA = 25 o C Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 0.5 1 1.5 2 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 o C 25 o C 125 o C VDS = -5V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 o C 25 o C -55 o C VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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