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FDG361N Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDG361N Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDG361N Rev C(W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 105 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 22.6 4 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C –5 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 0.6 A VGS = 6 V, ID = 0.6 A VGS = 10 V, ID = 0.6 A, TJ = 125 °C 370 396 685 500 550 976 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 2 A gFS Forward Transconductance VDS = 5V, ID = 0.6 A 3.6 S Dynamic Characteristics Ciss Input Capacitance 153 pF Coss Output Capacitance 5 pF Crss Reverse Transfer Capacitance VDS = 50 V, V GS = 0 V, f = 1.0 MHz 1pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 16 ns tr Turn–On Rise Time 4 8 ns td(off) Turn–Off Delay Time 11 20 ns tf Turn–Off Fall Time VDD = 50 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 612 ns Qg Total Gate Charge 3.7 5 nC Qgs Gate–Source Charge 0.8 nC Qgd Gate–Drain Charge VDS = 50 V, ID = 0.6 A, VGS = 10 V 1nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 0.4 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.4 A (Note 2) 0.8 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 300°C/W when mounted on a 1in 2 pad of 2 oz copper. b) 333°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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