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FDG361N Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDG361N
Spiegazioni elettronici  N-Channel 100V Specified PowerTrenchMOSFET
Download  5 Pages
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG361N Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FDG361N Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
100
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA,Referenced to 25°C
105
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V,
VGS = 0 V
10
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
22.6
4
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA,Referenced to 25°C
–5
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 0.6 A
VGS = 6 V,
ID = 0.6 A
VGS = 10 V, ID = 0.6 A, TJ = 125
°C
370
396
685
500
550
976
m
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 10 V
2
A
gFS
Forward Transconductance
VDS = 5V,
ID = 0.6 A
3.6
S
Dynamic Characteristics
Ciss
Input Capacitance
153
pF
Coss
Output Capacitance
5
pF
Crss
Reverse Transfer Capacitance
VDS = 50 V,
V GS = 0 V,
f = 1.0 MHz
1pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8
16
ns
tr
Turn–On Rise Time
4
8
ns
td(off)
Turn–Off Delay Time
11
20
ns
tf
Turn–Off Fall Time
VDD = 50 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
612
ns
Qg
Total Gate Charge
3.7
5
nC
Qgs
Gate–Source Charge
0.8
nC
Qgd
Gate–Drain Charge
VDS = 50 V,
ID = 0.6 A,
VGS = 10 V
1nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
0.4
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.4 A
(Note 2)
0.8
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
300°C/W when
mounted on a 1in
2 pad
of 2 oz copper.
b)
333°C/W when mounted
on a minimum pad of 2 oz
copper.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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