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FDG361N Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDG361N Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page August 2001 2001 Fairchild Semiconductor Corporation FDG361N Rev C(W) FDG361N N-Channel 100V Specified PowerTrenchMOSFET General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications • Load switch • Battery protection • Power management Features • 0.6 A, 100 V. RDS(ON)= 500 m Ω @ V GS = 10 V RDS(ON)= 550 m Ω @ V GS = 6.0 V • Low gate charge (3.7nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) SC70-6 D D G D D S Pin 1 6 5 4 1 2 3 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 0.6 A – Pulsed 2.0 Power Dissipation for Single Operation (Note 1a) 0.42 PD (Note 1b) 0.38 W TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 300 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 333 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .61 FDG361N 7’’ 8mm 3000 units |
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