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FDG361N Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDG361N
Spiegazioni elettronici  N-Channel 100V Specified PowerTrenchMOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG361N Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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August 2001
2001 Fairchild Semiconductor Corporation
FDG361N Rev C(W)
FDG361N
N-Channel 100V Specified PowerTrenchMOSFET
General Description
These
N-Channel
100V
specified
MOSFETs
are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power
dissipation
in
a
very
small
footprint
for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
Features
0.6 A, 100 V.
RDS(ON)= 500 m
Ω @ V
GS = 10 V
RDS(ON)= 550 m
Ω @ V
GS = 6.0 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
SC70-6
D
D
G
D
D
S
Pin 1
6
5
4
1
2
3
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
– Continuous
(Note 1a)
0.6
A
– Pulsed
2.0
Power Dissipation for Single Operation
(Note 1a)
0.42
PD
(Note 1b)
0.38
W
TJ, TSTG
Operating and Storage Junction Temperature Range
−55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
300
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
333
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.61
FDG361N
7’’
8mm
3000 units


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