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FDG361N Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FDG361N Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDG361N Rev C(W) Typical Characteristics 0 2 4 6 8 10 0123 4 Qg, GATE CHARGE (nC) ID = 0.6A V DS = 30V 70V 50V 0 50 100 150 200 0 10 203040 50 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS C OSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100m 100 µs R DS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 333 oC/W TA = 25 oC 10ms 1ms 0 2 4 6 8 10 0.0000 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 333°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 333°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
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