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FDG361N Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDG361N Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDG361N Rev C(W) Typical Characteristics 0 1 2 3 4 02468 VDS, DRAIN-SOURCE VOLTAGE (V) 5.0V 4.0V 4.5V V GS = 10V 6.0V 0.8 1 1.2 1.4 1.6 0 123 4 ID, DRAIN CURRENT (A) VGS = 4.0V 4.5V 5.0V 10V 6.0V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.2 0.6 1 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 0.6A V GS =10V 0.25 0.5 0.75 1 1.25 2468 10 VGS, GATE TO SOURCE VOLTAGE (V) I D = 0.3A TA = 125 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 1.5 3 4.5 6 1.5 2.5 3.5 4.5 5.5 VGS, GATE TO SOURCE VOLTAGE (V) T A = 125 oC 25 oC VDS = 5V -55 oC 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC V GS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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