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FDG327N Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDG327N Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDG327N Rev C (W) Typical Characteristics 0 4 8 12 16 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (V) 1.8V 2.0V V GS = 4.5V 3.0V 2.5V 0.8 1 1.2 1.4 1.6 1.8 2 0 4 8 12 16 ID, DRAIN CURRENT (A) VGS = 1.8V 2.5V 2.0V 4.5V 3.0V 3.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 1.5 A VGS = 4.5V 0.02 0.06 0.1 0.14 0.18 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) ID = 0.8A T A = 125 oC TA = 25 oC Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 3 6 9 12 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) TA =-55 oC 25 oC 125 oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) T A = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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