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FDG326 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDG326 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDG326P Rev D(W) Typical Characteristics 0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V) -1.5V -2.5V -2.0V -1.8V V GS = -4.5V -3.0V 0.75 1 1.25 1.5 1.75 2 2.25 2.5 0123456 -ID, DRAIN CURRENT (A) VGS = -1.8V -2.0V -3.0V -4.5V -2.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) I D = -1.5A V GS = -4.5V 0.05 0.1 0.15 0.2 0.25 0.3 0.35 12 34 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.8 A TA = 125 oC T A = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 1 2 3 4 5 6 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC V DS = -5V 0.001 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) T A = 125 oC 25 oC -55 oC V GS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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Descrizione simile - FDG326 |
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