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FDG326P Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FDG326P Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDG326P Rev D(W) Typical Characteristics 0 1 2 3 4 5 0 123456 Qg, GATE CHARGE (nC) ID = -1.5A VDS = -5V -15V -10V 0 100 200 300 400 500 600 700 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS CRSS COSS f = 1MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 10ms 1ms 100 µs R DS(ON) LIMIT V GS = -4.5V SINGLE PULSE RθJA = 260 oC/W T A = 25 oC 0 6 12 18 24 30 0.0001 0.001 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 260 oC/W T A = 25 oC Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 RθJA(t) = r(t) + RθJA RθJA = 260 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. |
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