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FDG316P Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDG316P Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDG316P Rev. D Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -34 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 µA IGSS Gate-Body Leakage Forward VGS = 16 V, VDS = 0 V 100 nA IGSS Gate-Body Leakage Reverse VGS = -16 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.6 -3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C 3.5 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -1.6 A VGS = -10 V, ID = -1.6 A,TJ =125 °C VGS = -4.5 V, ID = -1.3 A 0.16 0.22 0.23 0.19 0.31 0.30 Ω ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V -3 A gFS Forward Transconductance VDS = -5 V, ID = -0.5 A 3 S Dynamic Characteristics Ciss Input Capacitance 165 pF Coss Output Capacitance 60 pF Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz 25 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 8 20 ns tr Turn-On Rise Time 9 20 ns td(off) Turn-Off Delay Time 14 30 ns tf Turn-Off Fall Time VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 Ω 210 ns Qg Total Gate Charge 3.5 5 nC Qgs Gate-Source Charge 0.6 nC Qgd Gate-Drain Charge VDS = -15 V, ID = -1.6 A, VGS = -10 V 0.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -0.42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) 0.75 -1.2 V a) 170 °C/W when mounted on a 1 in2pad of 2oz copper. b) 260 °C/W when mounted on a minimum pad. |
Codice articolo simile - FDG316P |
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Descrizione simile - FDG316P |
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