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FDG316P Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDG316P Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page FDG316P Rev. D FDG316P P-Channel Logic Level PowerTrench MOSFET December 2001 2001 Fairchild Semiconductor Corporation Absolute Maxim um Ratings T A = 25°C unless otherwise noted Sym bol Param eter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) -1.6 A - Pulsed -6 Power Dissipation for Single Operation (Note 1a) 0.75 W PD (Note 1b) 0.48 TJ, Tstg Operating and Storage Junction Tem perature Range -55 to +150 °C Therm al Characteristics R θJA Therm al Resistance, Junction-to-Am bient (Note 1b) 260 °C/W Package Marking and Ordering Inform ation Device M arking Device Reel Size Tape W idth Quantity .36 FDG316P 7’’ 8m m 3000 units General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Power Management Features • -1.6 A, -30 V. R DS(ON) = 0.19 Ω @ VGS = -10 V R DS(ON) = 0.30 Ω @ VGS = -4.5 V. • Low gate charge (3.5nC typical). • High performance trench technology for extremely low R DS(ON). • Compact industry standard SC70-6 surface mount package. SC70-6 D S D G D D 3 5 6 4 1 2 3 |
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