Motore di ricerca datesheet componenti elettronici |
|
FDG316P Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
|
FDG316P Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDG316P Rev. D Typical Characteristics (continued) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.05 0.1 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R =260°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0 6 12 18 24 30 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA= 260 o C/W TA= 25 o C 0 2 4 6 8 10 00.511.522.533.5 Qg, GATE CHARGE (nC) ID = -1.6A V DS = 5V 10V 15V 0 50 100 150 200 250 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS CRSS COSS f = 1MHz V GS = 0 V Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.01 0.1 1 10 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms RDS(ON) LIMIT VGS = -10V SINGLE PULSE RθJA = 260 oC/W T A = 25 oC |
Codice articolo simile - FDG316P |
|
Descrizione simile - FDG316P |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |