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FDG316P Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDG316P Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDG316P Rev. D Typical Characteristics Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 2 4 6 8 10 01234 5 -V DS, DRAIN-SOURCE VOLTAGE (V) -6V -5.0V -4.5V -7.0V -3.5V V GS = -10V -4.0V -2.5V -3.0V -8.0V 0.8 1 1.2 1.4 1.6 1.8 2 0246 8 10 -ID, DIRAIN CURRENT (A) V GS = -4.0V -5.0V -6.0V -7.0V -8.0V -10V -4.5V 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -1.6A VGS = -10V 0 0.1 0.2 0.3 0.4 0.5 0.6 246 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -0.8A TA = 125 oC TA = 25 oC 0 2 4 6 8 10 0246 8 -VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25oC 125 oC VDS = -5V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, BODY DIODE FORWARD VOLTAGE (V) V GS = 0V T A = 125 oC 25 oC -55 oC Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
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