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FDG313N Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FDG313N Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDG313N Rev. C Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.05 0.1 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R =260°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0.1 0.2 0.5 1 2 5 10 20 30 50 0.01 0.03 0.1 0.3 1 2 5 V , DRAIN-SOURCE VOLTAGE (V) DS RDS (O N) LIM IT V = 4.5V SINGLE PULSE R =260°C/W T = 25°C GS A θJA DC 1s 10m s 100 ms 10s 1m s 0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5 Q , GATE CHARGE (nC) g I = 0.95A D 10V 15V V = 5V DS 0.1 0.5 1 2 5 10 25 5 10 20 50 100 150 V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0V GS Coss Crss 0 6 12 18 24 30 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA= 260 oC/W TA= 25 oC |
Codice articolo simile - FDG313N |
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Descrizione simile - FDG313N |
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