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FDG313N Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor

Il numero della parte FDG313N
Spiegazioni elettronici  Digital FET, N-Channel
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG313N Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor

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FDG313N Rev. C
Typical Characteristics (continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.05
0.1
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R
(t) = r(t) * R
R
=260°C/W
θJA
θJA
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2
0.1
0.2
0.5
1
2
5
10
20 30
50
0.01
0.03
0.1
0.3
1
2
5
V
, DRAIN-SOURCE VOLTAGE (V)
DS
RDS
(O
N)
LIM
IT
V
= 4.5V
SINGLE PULSE
R
=260°C/W
T = 25°C
GS
A
θJA
DC
1s
10m
s
100
ms
10s
1m
s
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
Q
, GATE CHARGE (nC)
g
I = 0.95A
D
10V
15V
V
= 5V
DS
0.1
0.5
1
2
5
10
25
5
10
20
50
100
150
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0V
GS
Coss
Crss
0
6
12
18
24
30
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
SINGLE PULSE
RθJA= 260
oC/W
TA= 25
oC


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