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FDG312P Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDG312P Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDG312P Rev. C FDG312P P-Channel 2.5V Specified PowerTrench ™ MOSFET February 1999 ©1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ± 8V ID Drain Current - Continuous (Note 1) -1.2 A - Pulsed -6 Power Dissipation for Single Operation (Note 1a) 0.75 W (Note 1b) 0.55 PD (Note 1c) 0.48 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 260 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .12 FDG312P 7’’ 8mm 3000 units General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications. Applications • Load switch • Battery protection • Power management Features • -1.2 A, -20 V. R DS(on) = 0.18 Ω @ V GS = -4.5 V R DS(on) = 0.25 Ω @ V GS = -2.5 V. • Low gate charge (3.3 nC typical). • High performance trench technology for extremely low R DS(ON). • Compact industry standard SC70-6 surface mount package. 3 5 6 4 1 2 3 SC70-6 D S D G D D |
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