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FDG312P Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor

Il numero della parte FDG312P
Spiegazioni elettronici  P-Channel 2.5V Specified PowerTrench??MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG312P Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor

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FDG312P Rev. C
Typical Characteristics (continued)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
01
234
0
1
2
3
4
5
Q
, GATE CHARGE (nC)
g
V
= -5V
DS
-15V
I
= -1.2A
D
-10V
0.1
0.2
0.5
1
2
5
10
20
10
30
100
300
1000
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0 V
GS
Coss
Crss
0
6
12
18
24
30
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULS E TIME (SEC)
SINGLE PULSE
RθJA= 260
o
C/W
TA= 25
o
C
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.05
0.1
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R
(t) = r(t) * R
R
=260°C/W
θJA
θJA
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2
0.1
0.2
0.5
1
2
5
10
20
50
0.01
0.03
0.1
0.3
1
3
10
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
V
= -4.5V
SINGLE PULSE
R
= 260°C/W
T
= 25°C
θJA
GS
A
DC
1s
10
0m
s
10m
s
1m
s
10
s
RD
S(
ON
) L
IM
IT


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