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FDG312P Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FDG312P Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDG312P Rev. C Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. 01 234 0 1 2 3 4 5 Q , GATE CHARGE (nC) g V = -5V DS -15V I = -1.2A D -10V 0.1 0.2 0.5 1 2 5 10 20 10 30 100 300 1000 -V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss 0 6 12 18 24 30 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULS E TIME (SEC) SINGLE PULSE RθJA= 260 o C/W TA= 25 o C 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.05 0.1 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R =260°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0.1 0.2 0.5 1 2 5 10 20 50 0.01 0.03 0.1 0.3 1 3 10 -V , DRAIN-SOURCE VOLTAGE (V) DS V = -4.5V SINGLE PULSE R = 260°C/W T = 25°C θJA GS A DC 1s 10 0m s 10m s 1m s 10 s RD S( ON ) L IM IT |
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