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FDG311N Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor |
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FDG311N Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page FDG311N Rev. D Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.05 0.1 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R =260 C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0 6 12 18 24 30 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA= 260 o C/W TA= 25 o C 0 1 2 3 4 5 00.5 1 1.522.5 33.5 4 Qg, GATE CHARGE (nC) ID = 1.9A VDS = 5V 10V 15V 0 100 200 300 400 500 0 4 8 121620 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V 0.01 0.1 1 10 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms RDS(ON) LIMIT VGS = 4.5V SINGLE PULSE RθJA = 260 oC/W TA = 25 oC |
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