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FDD6680A Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDD6680A Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDD6680A, Rev. C Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 56 A 200 mJ IAR Maximum Drain-Source Avalanche Current 56 A Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID =250 µA,Referenced to 25°C 23 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 11.5 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID =250 µA,Referenced to 25°C -4 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 14 A VGS = 10 V,ID =14 A,TJ=125 °C VGS = 4.5 V, ID = 12 A 0.008 0.012 0.010 0.0095 0.0160 0.0130 Ω ID(on) On-State Drain Current VGS = 5 V, VDS = 5 V 50 A gFS Forward Transconductance VDS = 10 V, ID = 14 A 41 S Dynamic Characteristics Ciss Input Capacitance 2180 pF Coss Output Capacitance 500 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 255 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 13 24 ns tr Turn-On Rise Time 14 26 ns td(off) Turn-Off Delay Time 43 70 ns tf Turn-Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 15 27 ns Qg Total Gate Charge 23 33 nC Qgs Gate-Source Charge 7 nC Qgd Gate-Drain Charge VDS = 15 V, ID = 14 A, VGS = 5 V, 11 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2.3 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.72 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) RθJA= 45 oC/W when mounted on a 1in2 pad of 2oz copper. b) RθJA= 96 oC/W on a minimum mounting pad. |
Codice articolo simile - FDD6680A |
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Descrizione simile - FDD6680A |
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