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FDD6680A Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDD6680A
Spiegazioni elettronici  N-Channel, Logic Level, PowerTrench MOSFET
Download  8 Pages
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD6680A Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FDD6680A, Rev. C
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V, ID = 56 A
200
mJ
IAR
Maximum Drain-Source Avalanche Current
56
A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250
µA
30
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID =250
µA,Referenced to 25°C
23
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA
11.5
3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID =250
µA,Referenced to 25°C
-4
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 14 A
VGS = 10 V,ID =14 A,TJ=125
°C
VGS = 4.5 V, ID = 12 A
0.008
0.012
0.010
0.0095
0.0160
0.0130
ID(on)
On-State Drain Current
VGS = 5 V, VDS = 5 V
50
A
gFS
Forward Transconductance
VDS = 10 V, ID = 14 A
41
S
Dynamic Characteristics
Ciss
Input Capacitance
2180
pF
Coss
Output Capacitance
500
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
255
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
13
24
ns
tr
Turn-On Rise Time
14
26
ns
td(off)
Turn-Off Delay Time
43
70
ns
tf
Turn-Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
15
27
ns
Qg
Total Gate Charge
23
33
nC
Qgs
Gate-Source Charge
7
nC
Qgd
Gate-Drain Charge
VDS = 15 V, ID = 14 A,
VGS = 5 V,
11
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.3
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.3 A
(Note 2)
0.72
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) RθJA= 45
oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96
oC/W on a minimum
mounting pad.


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