©2002 Fairchild Semiconductor Corporation

June 2002

FDD3672 Rev. A

FDD3672

100V, 44A, 28m

Ω

Features

• Low Miller Charge

• Low Qrr Body Diode

• Optimized efficiency at high frequencies

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 82760

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection System

• 42V Automotive Load Control

• Electronic Valve Train System

Thermal Characteristics

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

100

V

Gate to Source Voltage

±20

V

Drain Current

44

A

31

A

6.5

A

Pulsed

Figure 4

A

Single Pulse Avalanche Energy (Note 1)

120

mJ

Power dissipation

135

W

Operating and Storage Temperature

-55 to 175

Thermal Resistance Junction to Case TO-252

1.11

Thermal Resistance Junction to Ambient TO-252

100

52

S

G

D

TO-252AB

FDD SERIES

GATE

SOURCE

(FLANGE)

DRAIN