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FDC658P Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDC658P Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = -250 µA -30 V ∆BV DSS/∆TJ Breakdown Voltage Temp. Coefficient I D = -250 µA, Referenced to 25 oC -22 mV/ oC I DSS Zero Gate Voltage Drain Current V DS = -24 V, VGS = 0 V -1 µA T J = 55 oC -10 µA I GSSF Gate - Body Leakage, Forward V GS = 20 V, VDS = 0 V 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V DS = VGS, ID = -250 µA -1 -1.7 -3 V ∆V GS(th)/∆TJ Gate Threshold VoltageTemp.Coefficient I D = -250 µA, Referenced to 25 oC 4.1 mV/ oC R DS(ON) Static Drain-Source On-Resistance V GS = -10 V, ID = -4.0 A 0.041 0.05 Ω T J = 125 oC 0.058 0.08 V GS = -4.5 V, ID = -3.4 A 0.06 0.075 I D(on) On-State Drain Current V GS = -10 V, VDS = -5 V -20 A g FS Forward Transconductance V DS = -5V, ID = -4 A 9 S DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS = -15 V, VGS = 0 V, 750 pF C oss Output Capacitance f = 1.0 MHz 220 pF C rss Reverse Transfer Capacitance 100 pF SWITCHING CHARACTERISTICS (Note 2) t D(on) Turn - On Delay Time V DD = -15 V, ID = -1 A, 12 22 ns t r Turn - On Rise Time V GS = -10 V, RGEN = 6 Ω 14 25 ns t D(off) Turn - Off Delay Time 24 38 ns t f Turn - Off Fall Time 16 27 ns Q g Total Gate Charge V DS = -15 V, ID = -4.0 A, 8 12 nC Q gs Gate-Source Charge V GS = -5 V 1.8 nC Q gd Gate-Drain Charge 3 nC DRAIN-SOURCE DIODE CHARACTERISTICS I S Continuous Source Diode Current -1.3 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = -1.3 A (Note 2) -0.76 -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78 oC/W when mounted on a 1 in2 pad of 2oz Cu on FR-4 board. b. 156 oC/W when mounted on a minimum pad of 2oz Cu on FR-4 board. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC658P Rev.C |
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