FDC6561AN Rev.C

Figure 10. Single Pulse Maximum Power

Dissipation.

0.1

0.5

1

2

5

10

30

10

20

50

100

200

500

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0V

GS

C oss

C rss

Figure 8. Capacitance Characteristics

.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

0

1

2

3

4

0

2

4

6

8

10

Q , GATE CHARGE (nC)

g

I = 2.5A

D

10V

15V

V

= 5V

DS

0.1

0.3

1

3

10

30

50

0.01

0.03

0.1

0.3

1

3

10

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

RDS(ON)

LIMIT

V

= 10V

SINGLE PULSE

R

=180°C/W

T = 25°C

GS

A

θJA

DC

1s

10ms

100ms

1ms

100us

0.01

0.1

1

10

100

300

0

1

2

3

4

5

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=180°C/W

T = 25°C

A

θJA

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

0.0001

0.001

0.01

0.1

1

10

100

300

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

1

2

T - T

= P * R

(t)

A

J

P(pk)

R

(t) = r(t) * R

R

=180°C/W

θJA

θJA

θJA