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FDC654P Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

Il numero della parte FDC654P
Spiegazioni elettronici  P-Channel Enhancement Mode Field Effect Transistor
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC654P Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor

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FDC654P Rev.C
0
1
2
3
4
5
0
3
6
9
12
15
-V
, DRAIN-SOURCE VOLTAGE (V)
V
= -10V
GS
DS
-6.0
-5.0
-3.0
-4.0
-3.5
-4.5
0
3
6
9
12
15
0.5
1
1.5
2
-I
, DRAIN CURRENT (A)
V
= -3.5 V
GS
D
-10
-4.5
-4.0
-6.0
-5.0
-5.5
-7.0
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0001
0.001
0.01
0.1
1
15
-V
, BODY DIODE FORWARD VOLTAGE (V)
T = 125°C
J
25°C
-55°C
V
= 0V
GS
SD
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
2
4
6
8
10
0.05
0.1
0.15
0.2
0.25
0.3
-V
, GATE TO SOURCE VOLTAGE (V)
GS
I = -1.8A
D
T = 125°C
A
25°C
0
0.5
1
1.5
2
2.5
3
0
3
6
9
12
15
-V
, GATE TO SOURCE VOLTAGE (V)
V
= -5.0V
DS
GS
T = -55°C
J
125°C
25°C
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
J
V
= -10V
GS
I = -3.6A
D


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